Ipd60r360p7s
WebThe 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in … WebIPD60R360P7S Final Data Sheet Rev. 2.2, 2024-10-12 tab 1 2 3 DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th …
Ipd60r360p7s
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WebIPD60R360P7S price and availability organized by top electronic component distributors and suppliers Oemstrade.com Please enter a full or partial manufacturer part number with a … WebIPD60R360P7S Infineon Technologies US$1.3301 - TO-252-3 MOSFETs ROHS datasheet, price, inventory C536820
Web阿里巴巴为您找到1338条r7s芯片产品的详细参数,实时报价,价格行情,优质批发/供应等信息。 WebAll Results for "IPD60R360P7S" (5) In Stock. Normally Stocked. Active. New Products. RoHS Compliant. Select a category below to see filtering options and narrow down your …
Web12 jun. 2024 · Infineon Technologies AG's IPD60R360P7S is trans mosfet n-ch 600v 9a 3-pin(2+tab) dpak t/r in the fet transistors, mosfets category. Check part details, parametric & specs updated 15 OCT 2024 and download pdf datasheet from datasheets.com, a global distributor of electronics components. Webتلفن : 66728835-021. واتساپ : 09354193790. Search
WebIPD60R360P7S Infineon Technologies AG 4485 RFQ Top of Page ↑ Rutronik . Part # Manufacturer Description Stock Price Buy; IPD60R360P7S DISTI # TMOS2064. Infineon Technologies AG N-CH 600V 18A 360mOhm TO252-3 RoHS: Compliant Stock ...
Web9 apr. 2024 · IPD60R360P7S E8228 Infineon Technologies Infineon CONSUMER datasheet, inventory, & pricing. iowa vs rutgers technical foulsWebIPD60R360P7S price and availability organized by top electronic component distributors and suppliers. Oemstrade.com. Please enter a full or partial manufacturer part number with a minimum of 3 letters or numbers Search. Featured Distributors ( 0) Distributors ( … iowa vs sam houstonWebIPD60R360P7S. The IPD60R360P7S from Infineon Technologies is a MOSFET with Continous Drain Current 6 to 9 A, Drain Source Resistance 0.300 to 0.702 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPD60R360P7S can be seen below. opening ceremony of fifaWebipd60r360p7s.pdf Size:242K _inchange_semiconductor isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7SFEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for … opening ceremony of 2012 olympicsWeb阿里巴巴为您找到76条360场效应三极管产品的详细参数,实时报价,价格行情,优质批发/供应等信息。 iowa vs sdsu predictionsWebThe IPD60R360P7S from Infineon Technologies is a MOSFET with Continous Drain Current 6 to 9 A, Drain Source Resistance 0.300 to 0.702 Mohm, Drain Source Breakdown … opening ceremony olympics 2022 outfitsWebIPD60R360P7S. Overview. Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the … opening ceremony of fifa world cup 2022